Showcasing collaborative research from Rijksuniversiteit Groningen in The Netherlands, Lomonosov Moscow State University, Novosibirsk State University and Vorozhtsov Novosibirsk Institute of Organic Chemistry, Russia Long-range exciton transport in brightly fluorescent furan/phenylene co-oligomer crystals Design of materials combining bright luminescence and charge transport is one of the strategic challenges in organic optoelectronics. Extremely light doping of organic crystals with highly fluorescent molecules enhances the luminescence provided the exciton diffusion length is long enough to reach the dopant and have the exciton energy transferred to the dopant. We present a comprehensive study of singlet exciton diffusion in a brightly luminescent doped semiconductor crystal. The high potential of this material is demonstrated by fabricating solution-processed organic light-emitting transistors. As featured in: ISSN 2050-7526 REVIEW ARTICLE Jihyun Kim et al. Radiation damage effects in Ga 2 O 3 materials and devices Journal of Materials Chemistry C Materials for optical, magnetic and electronic devices rsc.li/materials-c Volume 7 Number 1 7 January 2019 Pages 1–190 rsc.li/materials-c Registered charity number: 207890 See Maxim S. Kazantsev, Dmitry Yu. Paraschuk, Maxim S. Pshenichnikov et al., J. Mater. Chem. C, 2019,
В журнале Journal of Materials Chemistry C, Volume 7, Issue 1, Pages 60-68 (IF 5,976) опубликована статья с участием сотрудников Института:
М.М. Казанцева, А.Д. Куимова, И.Р. Коскина, А.А. Сониной, Т.В. Рыбаловой, И.К. Шундринаа, Е.А. Мостовича
Long-range exciton transport in brightly fluorescent furan/phenylene co-oligomer crystals Artur A. Mannanov, Maxim S. Kazantsev, Anatoly D. Kuimov, Vladislav G. Konstantinov, Dmitry I. Dominskiy, Vasiliy A. Trukhanov, Daniil S. Anisimov, Nikita V. Gultikov, Vladimir V. Bruevich, Igor P. Koskin,c Alina A. Sonina, Tatyana V. Rybalova, Inna K. Shundrina, Evgeny A. Mostovich, Dmitry Yu. Paraschuk and Maxim S. Pshenichnikov
First published: 22 October 2018
Volume 130, January 2019, Pages 581-593
https://doi.org/10.1039/C8TC04151B
Abstract
The design of light-emitting crystalline organic semiconductors for optoelectronic applications requires a thorough understanding of the singlet exciton transport process. In this study, we show that the singlet exciton diffusion length in a promising semiconductor crystal based on furan/phenylene co-oligomers is 24 nm. To achieve this, we employed the photoluminescence quenching technique using a specially synthesized quencher, which is a long furan/phenylene co-oligomer that was facilely implanted into the host crystal lattice. Extensive Monte-Carlo simulations, exciton–exciton annihilation experiments and numerical modelling fully supported our findings. We further demonstrated the high potential of the furan/phenylene co-oligomer crystals for light-emitting applications by fabricating solution-processed organic light emitting transistors.
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