Synthetic approach for the control of self-doping in luminescent organic semiconductors

The article with participation of NIOCh's researchers is published in Journal  Materials Chemistry Frontiers,   (IF 8.683) 

Synthetic approach for the control of self-doping in luminescent organic semiconductors

Anatoly D. Kuimov, Christina S. Becker, Nikita A. Shumilov, Igor P. Koskin, Alina A. Sonina, Vladislav Yu. Komarov, Inna K. Shundrina and Maxim S. Kazantsev

Abstract

Molecular doping of organic luminescent materials is an efficient tool to tune their optoelectronic properties. In particular, self-doping by luminescent longer-conjugation chain chemical by-products is a convenient way to obtain highly emissive organic semiconductors. Although the self-doping approach allows us to avoid the necessity of dopant synthesis, to realize the self-doping and optimize dopant concentration there is a need for a stepwise gradual purification of a material which may be problematic. Here we report a synthetic approach allowing us to control self-doping in luminescent organic semiconductors based on arylene-vinylene co-oligomers. We designed 1,2-bis(5-(4-octylphenyl)thiophen-2-yl)ethene (C8-BPTE) and synthesized it via two pathways yielding batches with different self-dopant concentrations. Our approach does not require a complex purification and excludes a possible degradation of the materials under sublimation or chromatography conditions. The optical properties of C8-BPTE crystals have been demonstrated to be finely tuned by simple mixing of synthesized batches of the material in a desired proportion, the increase of self-doped material content showed an increase in PL QY by up to 1.7 times and caused a red shift of photoluminescence spectra. Moreover, C8-BPTE demonstrated good film-formation ability and the substrate-inclined crystallization showed an efficient way to control crystal lateral size and its orientation on the substrate. C8-BPTE thin-film also demonstrated good p-type charge transport in solution-processed organic field-effect transistors with mobility of up to 0.1 cm² V⁻¹ s⁻¹.

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